A semiconductor laser device including: semiconductor layers including an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the semiconductor layers having a stripe-shaped waveguide region formed therein; end face protective film formed on the end face of the semiconductor layer that is substantially perpendicular to the waveguide region; wherein a p-side protruding portion is formed in the vicinity of the end portion of a p-electrode or n-electrode.

 
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