An integrated circuit includes at least one porous silicon oxycarbide
(SiOC) insulator, which provides good mechanical strength and a low
dielectric constant (e.g., .epsilon..sub.R <2) for minimizing parasitic
capacitance. The insulator provides IC isolation, such as between circuit
elements, between interconnection lines, between circuit elements and
interconnection lines, or as a passivation layer overlying both circuit
elements and interconnection lines. The low dielectric constant silicon
oxycarbide isolation insulator of the present invention reduces the
parasitic capacitance between circuit nodes. As a result, the silicon
oxycarbide isolation insulator advantageously provides reduced noise and
signal crosstalk between circuit nodes, reduced power consumption, faster
circuit operation, and minimizes the risk of potential timing faults.