A capacitor for a semiconductor memory device includes a semiconductor substrate; an interlayer insulation film formed on the semiconductor substrate, having contact plugs filled with a conductive material; a diffusion barrier film formed on the interlayer insulation film including the contact plugs; a lower electrode formed on the diffusion barrier film; a dielectric film formed on the lower electrode; an upper electrode formed on the dielectric film; and a different type film formed adjacent to the upper electrode for applying a compressive stress to the dielectric film.