A method for fabricating a capacitor according to the present invention includes the steps of: forming a lower-level electrode layer over a structure having thermally deteriorative properties; depositing an insulating film, containing a titanium oxide, on the lower-level electrode layer at a deposition temperature of 400.degree. C. or less; conducting a heat treatment at a temperature higher than the deposition temperature and lower than 500.degree. C. after the insulating film has been deposited; and depositing an upper-level electrode layer on the insulating film after the heat treatment has been conducted.