Disclosed is a method of manufacturing a fringe field switching mode liquid crystal display device which can simplify process by reducing mask number. According to the present invention, a first transparent metal layer and a first metal layer are sequentially deposited on a transparent insulating substrate and patterned using a first mask. Next, a gate insulating layer, an amorphous silicon layer and a silicon nitride layer are sequentially deposited on the overall substrate and the silicon nitride layer is patterned using a second mask. The pattern portion is then patterned using a third mask so as to be exposed in the shape of a plate. Thereafter, a doped amorphous silicon layer and a second metal layer are sequentially deposited on the overall substrate and the second metal layer is patterned using the fourth mask. The doped amorphous silicon layer and the amorphous silicon layer are then etched using the source and drain as a mask. Next, a passivation layer is formed on the overall substrate and etched so as to expose a portion of the source. Thereafter, a second transparent metal layer is deposited on the passivation layer so as to fill the contact hole and patterned using a sixth mask.