A non-volatile memory device has a plurality of row lines extending in a first direction, a plurality of column lines extending in a second direction differing from the first direction, the plurality of column lines and the plurality of row lines forming a wiring matrix, a plurality of memory cells disposed at intersection points between the plurality of row lines and the plurality of column lines of the wiring matrix, each memory cell being formed by two ferromagnetic thin films and an insulation film therebetween, a wiring selection means for selecting at least one row line from the plurality of row lines and selecting at least one column line from the plurality of column lines, and a potential applying means for causing a prescribed current to flow in the selected row lines and column lines and applying to the row lines and column lines other than the selected row lines and column lines a prescribed potential which is not a ground potential.