In order to improve the dynamic properties of thyristors, it can be desire to lower the storage charge in the proximity of the emitter. This can be achieved in that the emitter efficiency is deteriorated by shorts given high currrent density. At the cathode side, the shorts are constructed such that highly-doped short-circuit regions are arranged in the emitter zone. The short-circuit regions are overlapped by intermediate regions that have the same type of conductivity as that of the emitter zone. That area not overlapped is significantly smaller than the area of the short-circuit region. The short-circuiting area is therefore small given low current density and is large given high current density. Similar shorts can also be employed at the anode side.