Cleaning method to prevent watermarks

   
   

In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 .ANG. is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.

В метод чистки и прибор чистки субстрата кремния, после влажных чистки или вытравливания субстрата иметь поверхность кремния снесен вне, и во время или после чисто rinse воды субстрата, пленки окиси с толщиной ANG 10 до 30. формирует на поверхности кремния путем полоскать субстрат чисто водой добавленной с окислителем, и после этого субстрат высушен. В виду того что сушить снесен вне после того как пленка окиси сформирована на поверхности кремния, возникновение метки воды можно предотвратить.

 
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