A semiconductor inspection apparatus which is possible to inspect a
plurality of semiconductor devices collectively at one time, which has
conventionally been difficult because of precision or the like of probes.
A method of manufacturing the semiconductor inspection apparatus comprises
the steps of forming a cover film on a surface of the silicon substrate
and forming a plurality of probes of a polygonal cone shape or a circular
cone shape through etching after patterning by photolithography, after the
cover film is removed, again forming a cover film on the surface of the
silicon substrate and forming a beam or a diaphragm for each probe through
etching after patterning by photolithography, after the cover film is
removed, again forming a cover film on the surface of the silicon
substrate and forming a through hole corresponding to the probe through
etching after patterning by photolithography, and after the cover film is
removed, forming an insulating film on the surface of the silicon
substrate, forming a metal film on a surface of the insulating film, and
forming a wiring lead through etching after patterning by
photolithography.
