A nonvolatile ferroelectric memory device includes a plurality of sense
amplifiers, top and bottom cell array units disposed respectively at an
upper and a lower sections, the top and bottom cell array units each
including a plurality of unit cells, and being disposed symmetrically
about the sense amplifiers. The nonvolatile ferroelectric memory device
further includes at least one top reference array unit, at least one
bottom reference array unit, a plurality of main bit lines connected to
the unit cells of the top or bottom cell array unit, and a plurality of
reference bit lines of the bottom or top cell array unit. Reference bit
lines of the top or bottom cell array unit correspond to main bit lines of
the bottom or top cell array unit disposed symmetrically about the sense
amplifiers.
