A method of measuring the thickness of ultra-thin (e.g., <200 .ANG.)
oxide formed on a semiconductor device uses a reference sample (i.e.,
another silicon wafer) which has been pre-processed to include a
relatively thick oxide surface layer. The thickness of the reference oxide
(t) is measured using any conventional technique (such as an
ellipsometer). An ultra-thin oxide is then simultaneously formed on both
the reference sample and semiconductor device. The total oxide thickness
(T) of the dual-layer structure on the reference sample is then measured
(again, using any conventional technique), and the difference between the
two measured values (T-t=.delta.) is defined as the thickness of the
ultra-thin oxide layer.
Метод измерять толщину ultra-thin (например,
