When a thin-film transistor (TFT) is formed on a glass substrate, electric
charges caused in the TFT can be removed so as to avoid electrostatic
damage in the TFT. A short-circuiting pattern that short-circuits the
source region and the drain region of the TFT is added to a polysilicon
pattern that constitutes the TFT. This short-circuiting pattern is removed
at the same time as or after the wiring formation in the source region and
the drain region.
