Semiconductor device with SI-GE layer-containing low resistance, tunable contact page

Semiconductor device with SI-GE layer-containing low resistance, tunable contact

The present invention provides a semiconductor device in which a low resistance, tunable contact is formed by means of using a Si.sub.x Ge.sub.1-x (0 Присытствыющий вымысел обеспечивает прибора на полупроводниках в низкое сопротивление, tunable контакт сформировано посредством использования Si.sub.x Ge.sub.1-x (0

Web www.patentalert.com

< Array panel for liquid crystal display device and method of manufacturing the same

< Liquid crystal display device

> Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors

> Method of forming refractory metal contact in an opening, and resulting structure

~ 00122