A structure which ensures against deterioration of an underlying silicide layer
over which a refractory material layer is deposited by physical vapor deposition
(PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous
polysilicon layer prior to the refractory material deposition. The continuous polysilicon
layer, preferably no thicker than 50 , serves a sacrificial purpose and
prevents damage to an underlying silicide layer by blocking interaction between
any fluorine and the underlying silicide that is released when the refractory material
is formed.
