Ferroelectric memory includes a hollow formed in a first insulation
film. A lower electrode is formed in this hollow by sol-gel method including an
application process due to a spin coat method. In this application process, a precursor
solution is dripped on a surface of the first insulation film and splashed away
due to centrifugal force. Due to this, a first conductive film to being formed
has an increased film thickness at portion of the hollow where the precursor solution
is ready to correct, or portion to be formed into a lower electrode, and a decreased
film thickness at portion other than the hollow. Accordingly, it is satisfactory
to etch only the hollow portion when forming a lower electrode by dry-etching the
first conductive film.
