An increased number of fuses per area are provided in this semiconductor device
while complying with the predetermined distance between the fuses. The device having
a first patterned, conductive interconnect plane on a passivated substrate; a second
patterned, conductive interconnect plane on the first patterned, conductive passivated
interconnect plane; contact devices for selectively electrically contact-connecting
the patterned, conductive interconnect planes to one another; a fuse device in
a nonpassivated section of the second patterned, conductive interconnect plane
with predetermined fuse regions for selectively linking interconnects; the fuse
device being divided into fuse modules with fuse pairs and the fuse regions thereof
at a predetermined distance from one another, which can be linked to a predetermined
potential via a central interconnect.
