Semiconductor laser structure and method of manufacturing same

   
   

A semiconductor laser having a mesa structure includes active laser layers. The mesa structure is confined by Fe--InP lateral semi-insulating layers. A p blocking layer is interposed between the mesa structure and the lateral semi-insulating layers. Performance at high temperature and linear laser operation are improved. A preferred application is for manufacturing SIBH-DFB lasers for direct modulation in the 10 Gbit/s range.

Лазер полупроводника имея структуру мезы вклюает активно слои лазера. Структура мезы ограничена Fe -- слоями inP боковыми семи-izoliru4. П преграждая слой interposed между структурой мезы и боковыми семи-izoliru4 слоями. Улучшены представление на высокой температуре и линейная деятельность лазера. Предпочитаемое применение для лазеров изготавливания SIBH-DFB для сразу модуляции в ряде 10 Gbit/s.

 
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