The invention proposes a novel technique for implementing high performance atomic
lithography, and in particular high resolution lithography. The technique makes
use of Stern-Gerlach type atomic interferometry enabling disturbances to be implemented
in the atomic phase of the beam. Such interaction then directly modulates the intensity
of the associated wave in the plane extending transversely to the beam of atoms,
and does so in controllable manner. The installation of the invention for nanolithography
by atomic interferometry comprises a Stern-Gerlach type interferometer comprising,
as its phase object, four-pole magnetic induction having a transverse gradient
created by four parallel bars carrying alternating direct currents, bracketed between
two separator plates, preceded and followed respectively by a spin polarizer and
by an analyzer operating by laser pumping. An additional uniform field is being
created by another four additional bars powered in paired manner by adjustable
currents in order to create a uniform field of arbitrary intensity and orientation
for the interference pattern by adjusting the two current parameters. The source
of atoms is a source that continuously discharges metastable helium or argon with
approximately Maxwell type speed dispersion of about 30% to 40% in order to obtain
a central spot.
