A semiconductor device a bleeder resistance circuit having conductors, an
insulating film disposed on the conductors, and thin film resistors each
overlying a respective one of the conductors with the insulating film
disposed therebetween. Each of the thin film resistors contains p-type
impurities and has a thickness in the range of 10 to 2000 angstroms. Each
of the conductors is electrically connected to and has the same electric
potential as a respective one of the thin film resistors.
