A solid-state imaging device is able to prevent a sensitivity from being
lowered and to suppress a smear caused as a pixel size is reduced and to
provide an excellent image quality even though it is miniaturized and a
manufacturing method thereof is proposed.
Also, a method of manufacturing a semiconductor device is able to form a
conductive layer having an excellent adhesion with an underlayer and whose
surface has an excellent flatness in the process for forming a metal
interconnection and the process for burying a contact-hole. A solid-state
imaging device (20) includes a light-shielding film (6) of a two layer
structure comprising a first film (11) formed of a film deposited by a
sputtering or vapor deposition and a second film (12) formed of a tungsten
film deposited by a chemical vapor deposition.
