The present invention describes encapsulated inorganic resists which are
compatible with conventional resist processing such as spin casting from
organic solvents and development with aqueous 2.38% TMAH developers. The
resist includes encapsulated inorganic materials as resist components, a
fact that significantly increases the plasma etch selectivity of the
resists compared to conventional polymeric resists. In effect, these
resist systems act as a photoimagable single layer hard mask, although use
as the top layer in a bilayer resist scheme is contemplated.
