A method for forming a rough ruthenium-containing layer on the surface of a
substrate assembly includes providing a ruthenium-containing precursor
into the reaction chamber. A rough ruthenium layer may be deposited on the
surface of the substrate assembly at a rate of about 100 .ANG./minute to
about 500 .ANG./minute using the ruthenium-containing precursor. Further,
a rough ruthenium oxide layer may be formed by providing a
ruthenium-containing precursor and an oxygen-containing precursor into the
reaction chamber to deposit the rough ruthenium oxide layer on the surface
of the substrate assembly at a rate of about 100 .ANG./minute to about
1200 .ANG./minute. An anneal of the layers may be performed to further
increase the roughness. In addition, conductive structures including a
rough ruthenium layer or a rough ruthenium oxide layer are provided. Such
layers may be used in conjunction with non-rough ruthenium and/or
non-rough ruthenium oxide layers to form conductive structures. For
example, such structures may be part of a capacitor structure, e.g.,
bottom electrode of a capacitor.
