A PMOS transistor is formed in a CMOS integrated circuit, having a
Si.sub.1-x Ge.sub.x /Si heterojunction between the channel region and the
substrate. The method is applicable to large volume CMOS IC fabrication.
Germanium is implanted into a silicon substrate, through a gate oxide
layer. The substrate is then annealed in a low temperature furnace, to
form Si.sub.1-x Ge.sub.x in the channel region.
