Methods and apparatus for fabricating and cleaning in-process
semi-conductor wafers are provided. An in-process wafer is placed within a
closed chamber. A reactant gas is incorporated in a liquid solvent to form
a "reactant mixture" that is capable of reacting with photoresist material
(or other material) on a wafer surface to facilitate removal of the
material from the wafer surface. The reactant mixture is condensed on one
or more of the in-process wafer surfaces to form a thin film on the
surface(s) of the wafer. The solvent in the reactant mixture acts as a
transport medium to place the reactant gas on the wafer surface. The
reactant gas is then able to react with the photoresist material (or other
material) on the in-process wafer surface to effect removal the material.
Following reaction of the reactant gas with the photoresist, the thin film
of reactant mixture is removed from the wafer surface by flash heating,
rinsing, draining, or other suitable means.
