A method and structure for a transistor device comprises forming a source,
drain, and trench region in a substrate, forming a first insulator over
the substrate, forming a gate electrode above the first insulator, forming
a pair of insulating spacers adjoining the electrode, converting a portion
of the first insulator into a metallic film, converting the metallic film
into one of a silicide and a salicide film, forming an interconnect region
above the trench region, forming an etch stop layer above the first
insulator, the trench region, the gate electrode, and the pair of
insulating spacers, forming a second insulator above the etch stop layer,
and forming contacts in the second insulator. The first insulator
comprises a metal oxide material, which comprises one of a HfO.sub.x and a
ZrO.sub.x.
