The present invention provides a method for creation of high quality
semiconductor-on-insulator structures, e.g., silicon-on-insulator
structures, using implantation of sub-stoichiometric doses of oxygen at
multiple energies. The method employs sequential steps of ion implantation
and high temperature annealing to produce structures with a top silicon
layer having a thickness ranging from 10-250 nm and a buried oxide layer
having a thickness 30-300 nm. The buried oxide layer has a breakdown field
greater than 5 MV/cm. Further, the density of silicon inclusions in the
BOX region is less than 2.times.10.sup.7 cm.sup.-2. The process of the
invention can be used to create an entire SOI wafer, or be used to create
patterned SOI, regions where SOI regions are integrated with non-SOI
regions.
