The present invention relates to a nonvolatile memory cell and/or array and
a method of operating the same high integrated density nonvolatile memory
cell enabling high integration density, low voltage programming and/or
high speed programming, a method of programming same and a nonvolatile
memory array.
A p-well 101 is formed in a surface of a substrate 10 and a channel forming
semiconductor region 110 is defined in a surface of the p-well 101 and
separated by a first n.sup.+ region 121 and a second n.sup.+ region 122. A
carrier-supplying portion (CS: carrier supply) 111 is formed coming into
contact with the first n.sup.+ region 121 and a
carrier-acceleration-injection portion 112 (AI: acceleration and
injection) is in contact with the second n.sup.+ region 122 in the channel
forming semiconductor region 110 wherein the carrier-supplying portion 111
and carrier-acceleration-injection portion 112 are in contact with each
other.
