In a solid-state imaging device in which a N-type photoelectric conversion
region is formed in a P.sup.- -type well region, a light-blocking film and
a transparent conductive film are formed on the N-type photoelectric
conversion region with a second interlayer insulation film interposed
therebetween. By applying a negative voltage to the light-blocking film
and the transparent conductive film, a P.sup.++ -type inversion region is
formed in a topmost part of the N-type photoelectric conversion region.
