Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof

   
   

The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In.sub.x (Ga.sub.1-y Al.sub.y).sub.1-x P on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45 Le processus comporte une étape d'accroître les cristaux épitaxial mélangés d'un semi-conducteur composé représenté par la formule In.sub.x (Ga.sub.1-y Al.sub.y).sub.1-x P de composition sur un substrat 12 de GaAs pour former une epi-gaufrette ayant un n-type couche 14 (0.45 de revêtement

 
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