Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device

   
   

When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.

Cuando un elemento magnetoresistente del efecto del túnel que tiene una estructura de múltiples capas de la película el contener de dos capas materiales ferromagnéticas (11, 12) y de una capa de barrera (13) se construye, después de que una capa material ferromagnética (11) hubiera sido depositada, una capa conductora (16), formada agregando un material de un elemento diferente de un material del metal a la porción material del metal dicho como componente principal de eso, se deposita en la capa material ferromagnética (11) y la capa de barrera (13) es formada oxidando la capa conductora (16), whereafter que la otra capa material ferromagnética (12) se deposita en la capa de barrera (13). Así, en el tipo magnetoresistente dispositivo del efecto del túnel de memoria, la dispersión del valor de la resistencia entre los elementos respectivos puede ser suprimida mientras que un cociente grande de TMR puede ser obtenido.

 
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