A method is presented in which an active element, e.g. a semiconductor
device, is embedded in a passive circuitry formed on a low-cost substrate,
having good dielectric properties. After forming the active element on a
first substrate, the active elements are singulated and transferred to a
second substrate. The active element is bonded to this second substrate
and the portion of the first substrate, on which this active element is
created, is removed selectively to the active element and the low-cost
substrate. On this second substrate passive circuitry may be present or it
can be formed after the attachment of the active element. The passive
circuitry is interconnected to the active element or other components or
dies present on the low-cost substrate.
