New precursors and processes to generate fluorinated poly(para-xylylenes)
("PPX") and their chemically modified films suitable for fabrications of
integrated circuits ("ICs") of <0.15 .mu.m are disclosed. The films so
prepared have low dielectric constants (".di-elect cons.") and are able to
keep the integrity of the dielectric, Cu, and the barrier metal, such as
Ta. Hence, the reliability of ICs can be assured.
