A ferroelectric memory (436) includes a plurality of memory cells (73, 82,
100) each containing a ferroelectric thin film (15) including a
microscopically composite material having a ferroelectric component (18)
and a dielectric component (19), the dielectric component being a
different chemical compound than the ferroelectric component. The
dielectric component is preferably a fluxor, i.e., a material having a
higher crystallization velocity than the ferroelectric component. The
addition of the fluxor permits a ferroelectric thin film to be
crystallized at a temperature of between 400.degree. C. and 550.degree. C.
