A deformable holder, system, and process where long range errors (any of
lithography, metrology, or overlay errors) between the image of a mask and
an existing pattern on a wafer from a number of potential sources are
corrected. The long range errors are determined using either a
through-the-lens alignment metrology system or an around-the-lens
metrology system. Deformation values are determined to compensate for the
longe range errors. The deformation values are determined by either
solving simultaneous equations or by finite-element linear-stress-analysis
(FEA). The mask or wafer is then distorted, in-plane, by an amount related
to the determined deformation values using an actuator such an a
piezoelectric ceramic to push or pull the mask or wafer to substantially
realign the projected image of the mask and the existing pattern on the
wafer.
