A composite integrated circuit is characterized in that to put an oxide
thin film into practical use as an electronic device, a highly crystalline
oxide thin film is grown on a silicon substrate. A MOS circuit and a thin
film capacitor are formed independently, and the two substrates are
laminated using an epoxy resin. They are connected through buried wiring,
thereby constituting a composite circuit package. As a second substrate
1a, a (110) plane orientation silicon substrate is used which differs from
the IC substrate with a (100) plane. On the (110) silicon substrate after
the termination processing, a dielectric layer is film deposited, followed
by forming an upper electrode, and by forming a thin film coil. Insulating
magnetic gel is filled between coil wires and its upper portion. Thus, the
fabrication process of the thin film coil and the composite integrated
circuit is completed.
