Semiconductor light emitting device

   
   

A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Una alta eficacia externa del quántum se asegura estable en un dispositivo que emite ligero del semiconductor. Por lo menos una hendidura y/o la porción que resalta se crea en la porción superficial de un substrato para dispersar o difractar la luz generada en una región que emite ligera. La hendidura y/o la porción que resalta tiene una forma que evite que los defectos cristalinos ocurran en capas del semiconductor.

 
Web www.patentalert.com

< GaN-based heterostructure photodiode

< Vertical cavity surface emitting laser that uses intracavity degenerate four-wave mixing to produce phase-conjugated and distortion free collimated laser light

> Semiconductor light emitting device and method for producing the same

> Light-emitting semiconductor potting composition and light-emitting semiconductor device

~ 00169