Silicon-germanium-based compositions comprising silicon, germanium, and
carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s)
on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and
novel methods of use for Si--Ge--C compositions are provided. In
particular, the invention relates to Si--Ge--C compositions, especially
for use as etch-stops and related processes and etchants useful for
microelectronic and nanotechnology fabrication.
