An exposure method comprising a step of subjecting a resist layer to
selective exposure to an ultraviolet light and forming a predetermined
pattern in the resist layer, wherein a polymer material having introduced
thereinto a cyclohexane group is used as a polymer material constituting
the resist layer wherein all hydrogen atoms bonded to four continuously
adjacent carbon atoms in the cyclohexane group are substituted by fluorine
atoms. The use of a polymer material having a lowered absorption in the
wavelength range of a vacuum ultraviolet (VUV) light in the resist
material or resist layer enables a more improved ultra-fine processing
than before.
