Device having reduced diffusion through ferromagnetic materials

   
   

A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.

 
Web www.patentalert.com

< CMOS pixel design for minimization of defect-induced leakage current

< IGBT with a Schottky barrier diode

> Integrated circuit having a thin film resistor located within a multilevel dielectric between an upper and lower metal interconnect layer

> Monolithic three dimensional array of charge storage devices containing a planarized surface

~ 00174