Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products

   
   

A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of parallel finger-like n-wells is formed in the p-type region. The fingers are connected to a conductive region at one end.

Una estructura de la novela para un fotodiodo se divulga. Se abarca de un p-tipo región, que puede ser un p-substrato o un p-well, extendiendo a la superficie de un substrato del semiconductor. Una multiplicidad de paralelo dedo-como n-pozos se forma en el p-tipo región. Los dedos están conectados con una región conductora en un extremo.

 
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