Disclosed is a technique capable of improving a yield of a semiconductor
device by measuring a plurality of TEGs arranged in a scribe region. A
first electrode pad connected to each terminal of a TEG is formed as a
rectangular, minute, isolated pattern having a side length of about 0.5
.mu.m or shorter and constituted of an uppermost layer wiring on a
semiconductor substrate, and therefore, a great number of TEGs can be laid
in a first scribe region. The characteristic evaluation or the failure
analysis is performed by contacting a nanoprobe having a tip radius of
curvature of 0.05 .mu.m to 0.8 .mu.m to the first electrode pad.
