A semiconductor memory device having self-aligned contacts, capable of preventing
a short-circuit between contacts for bit lines and contacts for storage electrodes
and improving a process margin, and a method of fabricating the same are provided.
The semiconductor memory device having self-aligned contacts includes a plurality
of gate electrode patterns arranged in parallel on a semiconductor substrate, in
which a plurality of first spacers are formed along the sidewalls of the gate electrode
patterns, a first interdielectric layer formed on the entire surface of a resultant
in which the first spacers are formed, a plurality of bit line patterns arranged
in parallel on the first interdielectric layer to be perpendicular to the gate
electrode patterns, in which a plurality of second spacers are formed along the
sidewalls of the bit line patterns, a plurality of contacts for bit lines self-aligned
with the first spacers, a second interdielectric layer formed on the entire surface
of a resultant in which the second spacers are formed, and a plurality of contacts
for storage electrodes simultaneously self-aligned with the second and first spacers.
