According to one exemplary embodiment, a high-k dielectric stack situated
between upper and lower electrodes of a MIM capacitor comprises a first high-k
dielectric layer, where the first high-k dielectric layer has a first dielectric
constant. The high-k dielectric stack further comprises an intermediate dielectric
layer situated on the first high-k dielectric layer, where the intermediate dielectric
layer has a second dielectric constant. According to this exemplary embodiment,
the high-k dielectric stack further comprises a second high-k dielectric layer
situated on the intermediate dielectric layer, where the second high-k dielectric
layer has a third dielectric constant. The second dielectric constant can be lower
than the first dielectric constant and the third dielectric constant. The high-k
dielectric stack further comprises first and second cladding layers, where the
first cladding layer is situated underneath the first high-k dielectric layer and
the second cladding layer is situated on the second high-k dielectric layer.
