The present invention discloses a nonvolatile memory with undercut trapping structure,
the nonvolatile memory comprising a semiconductor substrate. A gate oxide is formed
on the semiconductor substrate. A gate structure is formed on the gate oxide, wherein
the gate structure including a undercut structure formed at lower portion of the
gate structure and inwardly into the gate structure. An isolation layer is formed
over the sidewall of the gate structure. First spacers are formed on the sidewall
of the isolation layer and filled into the undercut structure for storing carrier
and source and drain regions formed adjacent to the gate structure and under the
undercut structure. Salicide is formed on the gate structure and the source and
drain regions.
