A method of manufacturing a device comprising individual thin films including
a
silicon film, a gate insulating film, a conductive film for a gate electrode, an
interlayer insulating film, and a conductive film for an electrode and wiring,
comprising: a step of applying a liquid material to form an applied film; and a
heat treatment and/or a light irradiating treatment of making the applied film
into the silicon film, wherein, as the liquid material, a high-order silane composition
comprising a high-order silence formed by photopolymerization by irradiating a
silane compound solution having a photopolymerization property with UV rays is used.
