Depletion mode ferroelectric transistors are adapted for use as non-volatile
memory cells. Various embodiments are described having a diode interposed between
the bit line and a source/drain region of the transistor for added margin against
read disturb. Various additional embodiments are described having an array architecture
such that two memory cells sharing the same bit line also share the same program
line. Using this configuration, non-selected cells are readily supplied with gate/source
voltages sufficient to maintain the cells in a deactivated state during read and
write operations on selected cells.
