The magnetization state of a ferromagnetic layer can be set to correspond to
different values of a data item to be stored in a hybrid memory device. The magnetization
state is non-volatile, and a write circuit can be coupled to the ferromagnetic
layer to reset or change the magnetization state to a different value. The write
circuit uses a pair of inductively coupled write wires in each row and column,
which are each given a signal with an amplitude approximately of that required
to change the state of the ferromagnetic layer.
