Element storage layer in integrated circuits

   
   

Reduced degradation to capacitor properties is disclosed. A hydrogen storage layer is provided over at least a portion a top capacitor electrode. The hydrogen storage layer absorbs and stores hydrogen, preventing hydrogen from diffusing to the capacitor. The hydrogen storage layer has, for example, lanthium nitride, titanium zirconium nitride, amorphous smco, nanostructured carbon, or a combination thereof.

 
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< Thin film magnetic head comprising SiON film

< System and method for eliminating design rule violations during construction of a mask layout block

> Process to manufacture a top spin valve

> Magnetic head capable of being increased in shape freedom of support and magnetic head device using the magnetic head

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