A method of formation of a capacitor forming part of an electric circuit when
producing
a circuit board, consisting of forming a valve metal bottom electrode layer and
a valve metal oxide dielectric layer on the same, then integrally forming a solid
electrolyte layer comprised of an organic semiconductor and a top electrode layer
comprised of metal on the same, this integral formation step consisting of the
step of holding one surface of metal foil for the top electrode at a bonding wedge
and making the other surface of the metal foil carry a powder of the organic semiconductor
by compression bonding and heating and the step of compression bonding the organic
semiconductor powder carried by compression bonding at the dielectric layer by
a bonding wedge through metal foil, whereby a solid electrolyte layer comprised
of an organic semiconductor sandwiched between the metal foil and dielectric layer
and closely bonded with the two is formed, a capacitor built into a circuit board,
a circuit board including a capacitor, and a method of production of the circuit board.