The present invention is related to a ferroelectric memory device and a method
for fabricating the same. The ferroelectric memory device includes: a substrate
providing a transistor; a first insulation material with a plane surface formed
on the substrate; a storage node contact passing through the first insulation material
to contact to an active region of the substrate; a lower electrode being connected
to the storage node contact and including a solid solution layer disposed at least
as an upper most layer, the solid solution layer being doped with a metal element,
which is induced to be in a solid solution state; a second insulation material
having a plane surface that exposes a surface of the lower electrode, encompassing
the lower electrode and being formed on the first insulation material; a ferroelectric
layer covering the second insulation material including the lower electrode; an
upper electrode formed on the ferroelectric layer.
